IRFIB6N60A, sihfib6n60a www.vishay.com vishay siliconix s16-0763-rev. d, 02-may-16 1 document number: 91175 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet features ? low gate charge q g results in simple drive requirement ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche voltage and current ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 note ? * this datasheet provides information about parts that are ? rohs-compliant and / or parts th at are non-rohs-compliant. for ? example, parts with lead (pb) te rminations are not rohs-compliant. ? please see the information / tables in this datasheet for details. applications ? switch mode power supply (smps) ? uninterruptible power supply ? high speed power switching ? high voltage isolation = 2.5 kv rms (t = 60 s, f = 60 hz) typical smps topologies ? single transistor forward ? active clamped forward notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. starting t j = 25 c, l = 6.8 mh, r g = 25 ? , i as = 9.2 a (see fig. 12). c. i sd ? 9.2 a, di/dt ? 50 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. product summary v ds (v) 600 r ds(on) ( ? )v gs = 10 v 0.75 q g max. (nc) 49 q gs (nc) 13 q gd (nc) 20 configuration single n-channel mo s fet g d s s d g to-220 fullpak available available ordering information package to-220 fullpak lead (pb)-free IRFIB6N60Apbf sihfib6n60a-e3 snpb IRFIB6N60A sihfib6n60a absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 5.5 t c = 100 c 3.5 pulsed drain current a i dm 37 linear derating factor 0.48 w/c single pulse avalanche energy b e as 290 mj repetitive avalanche current a i ar 9.2 a repetitive avalanche energy a e ar 6.0 mj maximum power dissipation t c = 25 c p d 60 w peak diode recovery dv/dt c dv/dt 5.0 v/ns operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d for 10 s 300 mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m
IRFIB6N60A, sihfib6n60a www.vishay.com vishay siliconix s16-0763-rev. d, 02-may-16 2 document number: 91175 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. repetiti v e rating; pulse width limited b y maximum junction temp erature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. c. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 % to 80 % v ds . d. t = 60 s, f = 60 hz. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -65 c/w maximum junction-to-case (drain) r thjc -2.1 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 600 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma d - 660 - mv/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v - - 25 a v ds = 480 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 3.3 a b - - 0.75 ? forward transconductance g fs v ds = 25 v, i d = 5.5 a 5.5 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 1400 - pf output capacitance c oss - 180 - re v erse transfer capacitance c rss -7.1- output capacitance c oss v gs = 0 v v ds = 1.0 v, f = 1.0 mhz - 1957 - v ds = 480 v, f = 1.0 mhz - 49 - effecti v e output capacitance c oss eff. v ds = 0 v to 480 v c -96- total gate charge q g v gs = 10 v i d = 9.2 a, v ds = 400 v, see fig. 6 and 13 b -- 49 nc gate-source charge q gs -- 13 gate-drain charge q gd -- 20 turn-on delay time t d(on) v dd = 300 v, i d = 9.2 a, r g = 9.1 ?? , r d = 35.5 ?? , see fig. 10 b -13- ns rise time t r -25- turn-off delay time t d(off) -30- fall time t f -22- gate input resistance r g f = 1 mhz, open drain 0.5 - 3.2 ? drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode -- 5.5 a pulsed diode forward current a i sm -- 37 body diode voltage v sd t j = 25 c, i s = 9.2 a, v gs = 0 v b --1.5v body diode re v erse reco v ery time t rr t j = 25 c, i f = 9.2 a, di/dt = 100 a/s b - 530 800 ns body diode re v erse reco v ery charge q rr -3.04.4c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) s d g
IRFIB6N60A, sihfib6n60a www.vishay.com vishay siliconix s16-0763-rev. d, 02-may-16 3 document number: 91175 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.7 v v , drain-to-so u rce v oltage ( v ) i , drain-to-so u rce c u rrent (a) ds d 4.7 v 1 10 100 1 10 100 20s pulse width t = 150 c j top bottom v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.7 v v , drain-to-so u rce v oltage ( v ) i , drain-to-so u rce c u rrent (a) ds d 4.7 v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50 v 20s pulse width ds v , gate-to-so u rce v oltage ( v ) i , drain-to-so u rce c u rrent (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , j u nction temperat u re ( c) r , drain-to-so u rce on resistance (normalized) j ds(on) v = i = gs d 10 v 9.2a
IRFIB6N60A, sihfib6n60a www.vishay.com vishay siliconix s16-0763-rev. d, 02-may-16 4 document number: 91175 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 0 400 800 1200 1600 2000 2400 1 10 100 1000 c, capacitance (pf) ds v , drain-to-so u rce v oltage ( v ) a v = 0 v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd iss oss rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-so u rce v oltage ( v ) g gs for test circuit see figure i = d 13 9.2a v = 120 v ds v = 300 v ds v = 480 v ds 0.1 1 10 100 0.2 0.5 0.7 1.0 1.2 v ,so u rce-to-drain v oltage ( v ) i , reverse drain c u rrent (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 10 100 1000 10000 operation in this area limited by r ds(on) single p u lse t t = 150 c = 25 c j c v , drain-to-so u rce v oltage ( v ) i , drain c u rrent (a) i , drain c u rrent (a) ds d 10 u s 100 u s 1ms 10ms
IRFIB6N60A, sihfib6n60a www.vishay.com vishay siliconix s16-0763-rev. d, 02-may-16 5 document number: 91175 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperat u re ( c) i , drain c u rrent (a) c d v ds p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. d u ty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectang u lar p u lse d u ration (s) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFIB6N60A, sihfib6n60a www.vishay.com vishay siliconix s16-0763-rev. d, 02-may-16 6 document number: 91175 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit a r g i as 0.01 t p d.u.t. l v ds + - v dd driver a 15 v 20 v t p v ds i as 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , j u nction temperat u re ( c) e , single p u lse avalanche energy (mj) j as i d top bottom 4.1a 5.8a 9.2a q g q gs q gd v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + -
IRFIB6N60A, sihfib6n60a www.vishay.com vishay siliconix s16-0763-rev. d, 02-may-16 7 document number: 91175 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - for n-channel ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91175 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
